semantic_scholarIEEE transactions on power electronics2026-08-01Cited by 2
Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
Zineng Yang, Xin Yang, Jingcun Liu, Hongchang Cui, Kuokchi Lei, Yujun Guo, et al.
Gallium nitride (GaN) power devices have achieved commercial success primarily in the 30–900 V range, particularly in consumer electronics. Yet, to borrow from Richard Feynman's famous remark, there remains plenty of room at both the “bottom” and the “top”— not only in voltage cl…