A NEW GEPBSB₄TE₈ QUATERNARY COMPOUND IN THE GETE–SB₂TE₃–PBTE QUASI-TERNARY SYSTEM

Fidan Rzayeva, M. Adygezalova, A. Gurbanova

Recently, interest in the study of ternary and quaternary compounds containing tin, stinbium and bismuth has increased significantly. These materials, due to their rich physical properties, attract special attention as promising research objects in the field of modern materials science. Developing high-performance crystals remains a cornerstone of contemporary scientific research, with advancements in this field serving as a primary catalyst for technological and industrial progress. The production and study of crystals directly affects the development of important application areas such as radioelectronics, semiconductor technologies, quantum electronics, technical optics and acoustics, and significantly increases their technological potential. A comprehensive physicochemical investigation—employing DTA, X-ray diffraction, microstructural analysis, microhardness measurements, and density determination—was conducted to map the germanium antimony telluride 24 () GeSb Te - lead antimony telluride 24 () PbSb Te cross-section of the the germanium tellurid GeTe antimon tellurid 23 Sb Te - lead telluride PbTe quasi-ternary system for the first time. The resulting phase diagram reveals that this cross-section behaves as a partial quasi-non-ternary segment of the overarching system It was determined that cross-section is a partial quasi-non-ternary part of the GeTe Sb Te PbTe −− 23 quasiternary system. A region of germanium antimony telluride -based solid solutions (a molar concentration of 15% lead antimony telluride) was identified. At a 1:1 ratio of the initial components, the formation of a congruent phase transition of germanium lead antimony telluridefrom solid to liquid is observed. Chemical transport reactions were successfully employed to grow single crystals of the quaternary germanium antimony telluride GePbSb Te 48 compound. Structural analysis revealed that germanium antimony telluride crystallizes in an orthorhombic lattice with the following unit cell parameters: a=5.05Å, b=9.93Å and c=11.61Å. Furthermore, investigations into the temperature-dependent electrophysical properties of both the pristine germanium antimony telluride phase and the 24 () GeSb Te x lead antimony telluride 2 4 1 () − PbSb Te −x solid solutions confirmed that these synthesized alloys exhibit p-type semiconducting conductivity