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HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga <sub>2</sub> O <sub>3</sub>
Takayoshi Oshima, Yuichi Oshima
We propose (−112) and crystallographically equivalent (1−1−2), (−1−12), and (11−2) planes as fundamental crystal orientations for β-Ga2O3 studies. In homoepitaxy, the epilayer exhibited single crystallinity with tilt and twist dispersions comparable to those of the substrate and…